MRF5P20180HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
13 30Vη
DD
= 28 Vdc, P
out
= 38 W (Avg.), I
DQ
= 1600 mA
12 25D
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 20602080
5
15
1840
?45
40
10 ?20
IRL
9 ?25
14 35Gps
6 ?40
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
@ Pout
= 38 Watts Avg.
G
ps
, POWER GAIN (dB)
?35
?10
?15
?20
?25
INPUT RETURN LOSS (dB)
IRL,
IM3 (dBc), ACPR (dBc)
?30
7 ?35IM3
11 202?Carrier W?CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
8 ?30
1000
11
16
1
IDQ
= 2400 mA
800 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
VDD
= 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
10 100
15.5
15
14.5
14
13.5
13
12.5
12
11.5
2000 mA
1200 mA
1600 mA
1000
?60
?20
1
IDQ
= 800 mA
2400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
VDD
= 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
1600 mA
1200 mA
2000 mA
10 100
?25
?30
?35
?40
?45
?50
?55
110100
?60
?20
0.1
7th Order
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
VDD
= 28 Vdc, P
out
= 180 W (PEP), I
DQ
= 1600 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
INTERMODULATION DISTORTION (dBc)
IMD,
?25
?30
?35
?40
?45
?50
?55
46
44
58
30
P1dB = 53.5 dBm (224 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
44
42
40
38
36
34
32
57
56
55
54
53
52
51
50
49
48
47
46
45
P3dB = 54 dBm (251 W)
Actual
Ideal
η
D
, DRAIN
EFFICIENCY (%)
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
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